4707 dey road liverpool, n.y. 13088 (315) 701-6751 features: ? pin compatible with mpm3013 ? quad independent n - channel mosfets ? isolated package for direct heat sinking, excellent thermal conductivity ? avalanche rated devices ? 55 volt, 25 amp rated ? low rds (on) - 0.022 w for each die iso-9001 certified by dscc m.s.kennedy corp. quad n-channel mosfet power module ? stepper motor servo control ? disk drive head control ? x-y table control ? az-el antenna control ? various switching applications typical applications pin-out information 1 q1 gate 7 q3 gate 2 q1 source 8 q3 source 3 q1 drain 9 q3 drain 4 q2 gate 10 q4 gate 5 q2 source 11 q4 drain 6 q2 drain 12 q4 source 3013 the msk 3013 is a quad n-channel power circuit packaged in a space efficient isolated ceramic tab power sip package. the msk 3013 consists of four totally isolated n-channel mosfets. the msk 3013 uses m.s.kennedy's proven power hybrid technology to bring a cost effective high performance circuit for use in today's sophisticated servo motor and disk drive systems. the msk 3013 is a replacement for the mpm3013 with only minor differences in specifications. description: equivalent schematic rev. b 7/00 1
drain-source breakdown voltage vgs = 0 id = 0.25 ma 55 - - v drain-source leakage current vds = 55v vgs = 0v - - 25 a gate-source leakage current vgs = 20v vds = 0 - - 100 na gate-source threshold voltage vds = vgs id = 250 a 2 - 4 v drain-source on resistance 2 vgs = 10v id = 25a - 0.033 0.040 drain-source on resistance 3 vgs = 10v id = 25a - - 0.022 forward transconductance 1 vds = 25v id = 25a 17 - - s total gate charge 1 id = 25a - - 65 nc gate-source charge 1 vds = 28v - - 12 nc gate-drain charge 1 vgs = 10v - - 27 nc turn-on delay time 1 vdd = 28v - 7.3 - ns rise time 1 id = 25a - 69 - ns turn-off delay time 1 rg = 12 - 47 - ns fall time 1 rd = 1.1 - 60 - ns input capacitance 1 vgs = 0v - 1300 - pf output capacitance 1 vds = 25v - 410 - pf reverse transfer capacitance 1 f = 1 mhz - 150 - pf body diode forward on voltage 1 is = 25a vgs = 0v - 1.3 1.75 v reverse recovery time 1 is = 25a di/dt = 100a/s - 65 98 ns reverse recovery charge 1 is = 25a di/dt = 100a/s - 160 240 c t j junction temperature. . . ........+ 175c max t st storage temperature. . . ..... .-55c to +150c t c case operating temperature range . .-55c to 125c t ld lead temperature range (10 seconds) . . . . . . ......... .300c max v dss drain to source voltage . . .55v max v dgdr drain to gate voltage (r gs =1m w )......... 55v max v gs gate to source voltage (continuous). ....... 20v max i d continuous current ..... 25a max i dm pulsed current ....... 49a max r th-jc thermal resistance (junction to case). ..... 0.3c/w absolute maximum ratings rev. b 7/00 2 notes: 1 this parameter is guaranteed by design but need not be tested. typical parameters are representative of actual device performance but are for reference only. 2 resistance as seen at package pins. 3 resistance for die only; use for thermal calculations. 4t a =25c unless otherwise specified. parameters apply to each transistor in the module. electrical specifications units min. typ. max. msk 3013 test conditions 4 parameter w w w
n-channel gates for driving the n-channel gates, it is important to keep in mind that it is essentially like driving a capacitance to a suff icient voltage to get the channel fully on. driving the gates to +15 volts with respect to their sources assures that the transistors are on. this will keep the dissipation down to a minimum level [r ds(on) specified in the data sheet]. how quickly the gate gets turned on and off will determine the dissipation of the transistor while it is transitioning from off to on, and vice-versa. turning the gate on and off too slow will cause excessive dissipation, while turning it on and off too fast will cause excessive switching noise in the system. it is important to have as low a driving impedance as practical for the size of the transistor. many motor dri ve ic's have sufficient gate drive capability for the msk 3013. if not, paralleled cmos standard gates will usually be sufficient. a series resistor in the gate circuit slows it down, but also suppresses any ringing caused by stray inductances in the mosfet circuit. the selection of the resistor is determined by how fast the mosfet wants to be switched. see figure 1 for circuit details. figure 2 this deadtime should allow for the turn on and turn off time of the transistors, especially when slowing them down with gate resistors. this situation will be present when switching motor direction, or when sophisticated timing schemes are used for se rvo systems such as locked antiphase pwm'ing for high bandwidth operation. rev. b 7/00 3 application notes bridge drive considerations it is important that the logic used to turn on and off the various transistors allow sufficient "dead time" between a high s ide transistor and its low side transistor to make sure that at no time are they both on. when they are, this is called "shoot-thr ough", and it places a momentary short across the power supply. this overly stresses the transistors and causes excessive noise as we ll. see figure 3. figure 1
rev. b 7/00 4 typical performance curves
the information contained herein is believed to be accurate at the time of printing. msk reserves the right to make changes to its products or specifications without notice, however, and assumes no liability for the use of its products. m.s. kennedy corp. 4707 dey road, liverpool, new york 13088 phone (315) 701-6751 fax (315) 701-6752 www.mskenndy.com part number screening level ordering information all dimensions are 0.010 inches unless otherwise labeled. torque specification 3 to 5 in/lbs. teflon screws or washers are recommended. rev. b 7/00 5 mechanical specifications industrial msk 3013
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